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Low-temperature UV photoluminescence of ion beam synthesized Si nanoclusters embedded in Si

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dc.contributor.authorSahu, G
dc.contributor.authorLenka, H P
dc.contributor.authorMahapatra, D P
dc.contributor.authorRout, B
dc.contributor.authorDas, Mukunda P
dc.date.accessioned2015-12-08T22:22:27Z
dc.date.issued2012
dc.date.updated2015-12-08T08:44:42Z
dc.description.abstractUltraviolet (UV) photoluminescence (PL) data taken on a double Au implanted Si matrix are reported. This has been studied over a wide temperature range of 28-220 K. At low temperature, the spectrum shows four peaks corresponding to a zero-phonon line (ZPL
dc.identifier.issn2043-6262
dc.identifier.urihttp://hdl.handle.net/1885/32575
dc.publisherIOP Publishing
dc.rightsAuthor/s retain copyrighten_AU
dc.sourceAdvances in Natural Sciences: Nanoscience and Nanotechnology
dc.titleLow-temperature UV photoluminescence of ion beam synthesized Si nanoclusters embedded in Si
dc.typeJournal article
dcterms.accessRightsOpen Accessen_AU
local.bibliographicCitation.issue2
local.bibliographicCitation.startpage4
local.contributor.affiliationSahu, G, Institute of Physics
local.contributor.affiliationLenka, H P, Sikkim Manipal Institute of technology
local.contributor.affiliationMahapatra, D P, Institute of Physics
local.contributor.affiliationRout, B, University of North Taxas
local.contributor.affiliationDas, Mukunda P, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidDas, Mukunda P, u8708721
local.description.notesImported from ARIES
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationu4726473xPUB93
local.identifier.citationvolume3
local.identifier.doi10.1088/2043-6262/3/2/025002
local.identifier.scopusID2-s2.0-84890861123
local.type.statusPublished Version

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