III-V compound semiconductor nanowires for optoelectronic device applications
Date
2011
Authors
Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kang, Jung-Hyun
Kim, Yong
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Zou, Jin
Jagadish, Chennupati
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World Scientific Publishing Company
Abstract
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size.
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Keywords
Keywords: Au nanoparticle; Carrier dynamics; Catalyst size; Defect-free; Exciton lifetime; GaAs; Growth parameters; III-V compound semiconductor; InP; Metalorganic chemical vapor deposition; Research activities; Si (1 1 1); Straight nanowires; V/III ratio; Catalyst carrier dynamics; III-V compound semiconductors; metalorganic chemical vapor deposition; Nanowires; photoluminescence
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Source
International Journal of High Speed Electronics and Systems
Type
Journal article
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2037-12-31
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