Role of F on the Electrical Activation of As in Ge
Date
2012
Authors
Impellizzeri, G
Napolitani, E
Boninelli, S
Sullivan, James
Roberts, Jason
Buckman, Stephen
Ruffell, Simon
Priolo, Francesco
Privitera, V
Journal Title
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Publisher
The Electrochemical Society
Abstract
Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal
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Source
ECS Journal of Solid State Science and Technology
Type
Journal article
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2037-12-31