The effect of a post oxidation in-situ nitrogen anneal on Si surface passivation
The thermal stability of Si / SiO2 stacks and Si / SiO2 / Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO2 / Si3N4 stacks have a much slower depassivation rate than Si / SiO2 stacks due to hydrogen stored in...[Show more]
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|Source:||Proceedings of the World Conference on Photovoltaic Energy Conversion 2006|
|01_Jin_The_effect_of_a_post_oxidation_2006.pdf||205.23 kB||Adobe PDF||Request a copy|
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