The effect of a post oxidation in-situ nitrogen anneal on Si surface passivation
Date
2006
Authors
Jin, Hao
Weber, Klaus
Blakers, Andrew
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Publisher
OmniPress
Abstract
The thermal stability of Si / SiO2 stacks and Si / SiO2 / Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO2 / Si3N4 stacks have a much slower depassivation rate than Si / SiO2 stacks due to hydrogen stored in nitride layer.
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Keywords
Keywords: Enterprise resource planning; Photoconductivity; Rapid thermal annealing; Thermodynamic stability; Thermooxidation; In-situ annealing; Nitrogen annealing; Quasi-steady state photoconductivity decay (QSSPCD); Silicon solar cells
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Source
Proceedings of the World Conference on Photovoltaic Energy Conversion 2006
Type
Conference paper
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Restricted until
2037-12-31
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