The effect of a post oxidation in-situ nitrogen anneal on Si surface passivation

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dc.contributor.authorJin, Haoen_AU
dc.contributor.authorWeber, Klausen_AU
dc.contributor.authorBlakers, Andrewen_AU
dc.coverage.spatialWaikoloa Hawaii
dc.date.accessioned2015-12-08T22:09:43Z
dc.date.createdMay 8-12 2006
dc.date.issued2006
dc.date.updated2015-12-08T07:26:52Z
dc.description.abstractThe thermal stability of Si / SiO2 stacks and Si / SiO2 / Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO2 / Si3N4 stacks have a much slower depassivation rate than Si / SiO2 stacks due to hydrogen stored in nitride layer.
dc.identifier.isbn1424400163
dc.identifier.urihttp://hdl.handle.net/1885/29156
dc.publisherOmniPress
dc.relation.ispartofseriesWorld Conference on Photovoltaic Energy Conversion 2006
dc.sourceProceedings of the World Conference on Photovoltaic Energy Conversion 2006
dc.subjectKeywords: Enterprise resource planning; Photoconductivity; Rapid thermal annealing; Thermodynamic stability; Thermooxidation; In-situ annealing; Nitrogen annealing; Quasi-steady state photoconductivity decay (QSSPCD); Silicon solar cells
dc.titleThe effect of a post oxidation in-situ nitrogen anneal on Si surface passivation
dc.typeConference paper
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage1
local.contributor.affiliationJin, Hao, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.affiliationBlakers, Andrew, College of Engineering and Computer Science, ANU
local.contributor.authoruidJin, Hao, u4065013
local.contributor.authoruidWeber, Klaus, u9116880
local.contributor.authoruidBlakers, Andrew, u9113453
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu4251866xPUB63
local.identifier.doi10.1109/WCPEC.2006.279326
local.identifier.scopusID2-s2.0-41749108398
local.type.statusPublished Version

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