Integration of Quantum Dot devices by Selective Area Epitaxy
Date
2006
Authors
Mokkapati, Sudha
Jagadish, Chennupati
McBean, K. E.
Phillips, Matthew R.
Tan, Hark Hoe
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.
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Keywords
Keywords: Crystal growth; Epitaxial growth; Indium arsenide; Molecular beam epitaxy; Nanoscience; Nanotechnology; Optical waveguides; Quantum electronics; Semiconducting indium; Silicon compounds; International conferences; Nanoscience and nanotechnology (NST); Pre Integrated optoelectronic devices; Quantum dots; Selective area epitaxy
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Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
Type
Conference paper
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Restricted until
2037-12-31
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