SiO x /GeO x nanowires grown via the active oxidation of Si/Ge substrates
Silica nanowires have recently been grown via the vapor-liquid-solid growth mechanism where the vapor precursor is obtained directly from the substrate via active oxidation processes. In this study, we extend this technique to the Ge-O system and show that Au coated Ge substrates can be used as a volatile GeO source, resulting in germania nanowire formation above 550°C. The process is highly dependent on Au and native oxide thickness', the partial pressure of O2 and annealing temperature. If...[Show more]
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|Source:||Materials Science Forum|
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