Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density
Variable-temperature photoluminescence(PL) spectra of Si-doped self-assembled InGaAsquantum dots(QDs) with and without GaAs cap layers were measured. Narrow and strong emission peak at 1075nm and broad and weak peak at 1310nm were observed for the buried and surfaceQDs at low temperature, respectively. As large as 210meV redshift of the PL peak of the surfaceQDs with respect to that of the buried QDs is mainly due to the change of the strain around QDs before and after growth of the GaAs cap...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Wei_Thermal_quenching_of_2005.pdf||Published Version||224.18 kB||Adobe PDF|
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