Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density
Date
2005-10-20
Authors
Wei, Z. F.
Xu, S. J.
Duan, R. F.
Li, Q.
Wang, Jian
Zeng, Y. P.
Liu, H. C.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Variable-temperature photoluminescence(PL) spectra of Si-doped self-assembled InGaAsquantum dots(QDs) with and without GaAs cap layers were measured. Narrow and strong emission peak at 1075nm and broad and weak peak at 1310nm were observed for the buried and surfaceQDs at low temperature, respectively. As large as 210meV redshift of the PL peak of the surfaceQDs with respect to that of the buried QDs is mainly due to the change of the strain around QDs before and after growth of the GaAs cap layer. Using the developed localized-state luminescence model, we quantitatively calculate the temperature dependence of PL peaks and integrated intensities of the two samples. The results reveal that there exists a large difference in microscopic mechanisms of PL thermal quenching between two samples.
Description
Keywords
Citation
Collections
Source
Journal of Applied Physics
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
Restricted until
Downloads
File
Description
Published Version