Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density

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dc.contributor.authorWei, Z. F.
dc.contributor.authorXu, S. J.
dc.contributor.authorDuan, R. F.
dc.contributor.authorLi, Q.
dc.contributor.authorWang, Jian
dc.contributor.authorZeng, Y. P.
dc.contributor.authorLiu, H. C.
dc.date.accessioned2015-12-03T04:22:04Z
dc.date.available2015-12-03T04:22:04Z
dc.date.issued2005-10-20
dc.description.abstractVariable-temperature photoluminescence(PL) spectra of Si-doped self-assembled InGaAsquantum dots(QDs) with and without GaAs cap layers were measured. Narrow and strong emission peak at 1075nm and broad and weak peak at 1310nm were observed for the buried and surfaceQDs at low temperature, respectively. As large as 210meV redshift of the PL peak of the surfaceQDs with respect to that of the buried QDs is mainly due to the change of the strain around QDs before and after growth of the GaAs cap layer. Using the developed localized-state luminescence model, we quantitatively calculate the temperature dependence of PL peaks and integrated intensities of the two samples. The results reveal that there exists a large difference in microscopic mechanisms of PL thermal quenching between two samples.en_AU
dc.description.sponsorshipThe work was supported by HK RGC CERG Grant under Contract No. HKU 7049/04P and HKU Research Grant under Contract No. 10204008.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/17001
dc.publisherAmerican Institute of Physics (AIP)en_AU
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/12/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.2112176en_AU
dc.sourceJournal of Applied Physicsen_AU
dc.titleThermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet densityen_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.issue8en_AU
local.bibliographicCitation.startpage084305en_AU
local.contributor.affiliationWei, Z. F., University of Hong Kong, Hong Kongen_AU
local.contributor.affiliationXu, Shijie, University of Hong Kong, Hong Kongen_AU
local.contributor.affiliationDuan, Ruifei, University of Hong Kong, Hong Kongen_AU
local.contributor.affiliationLi, Qing, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWang, Jian, University of Hong Kong, Hong Kongen_AU
local.contributor.affiliationZeng, Yiping, Chinese Academy of Sciences, Chinaen_AU
local.contributor.affiliationLiu, H. C., National Research Council of Canada, Canadaen_AU
local.contributor.authoruidu4367518en_AU
local.description.notesImported from ARIES. At the time of publication the author Li was affiliated with Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong.en_AU
local.identifier.absfor020501en_AU
local.identifier.ariespublicationu4367518xPUB5en_AU
local.identifier.citationvolume98en_AU
local.identifier.doi10.1063/1.2112176en_AU
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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