Chemistry of Cu deposition by Cu(hfac)(tmvs) monitored by Li⁺ ion attachment mass spectrometry

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Fujii, Toshihiro
Arulmozhiraja, Sundaram
Nakamura, Megumi
Shiokawa, Yoshiro

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American Institute of Physics (AIP)

Abstract

Ion attachment mass spectrometry was used for continuous in situanalysis of coordinated products formed during copperchemical vapor deposition(CuCVD) by Cu(1,1,1,5,5,5-hexafluoroacetylacetonate)(vinyltrimethylsilane) [Cu(hfac)(tmvs)] in a simple tubular reactor. This study of the thermally labile Cu(hfac)(tmvs) demonstrated the utility of this method for detecting molecular ions of labile compounds. The results demonstrate the feasibility of monitoring the deposition chemistry of Cu(hfac)(tmvs) by generating Li⁺ adduct molecular ions by means of the Li⁺ ion attachment technique. The reaction pathways for CuCVD by Cu(hfac)(tmvs) were studied by analysis of the reaction products. H(hfac) and tmvs were identified as the main products when Cu(hfac)tmvs was heated at temperatures ranging from room temperature to 160°C in the reactor. The rate constant for Cu deposition, k (1/s), was determined to be 1.6×10⁶exp(−10.2kcal/molRt).

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Journal of Applied Physics

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