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Electronic properties of (Ga,Mn)N thin films with high Mn content

Granville, S.; Ruck, B. J.; Preston, A. R. H.; Stewart, T.; Budde, F.; Trodahl, H. J.; Bittar, A.; Downes, J. E.; Ridgway, M.

Description

Optical and dc resistivity measurements as well as x-ray spectroscopies have been performed on (Ga,Mn)N films containing Mn at up to 11 at. %. The results indicate that at higher Mn contents, the Fermi level is situated within extended states, while GaN host interband optical transitions are unaffected. The Mn state is confirmed to be 3d⁵, as in the case of lower Mn content films; however, the high Mn content merges the 3d levels into a band located just below the host conduction band. The...[Show more]

CollectionsANU Research Publications
Date published: 2008-11-19
Type: Journal article
URI: http://hdl.handle.net/1885/16015
Source: Journal of Applied Physics
DOI: 10.1063/1.3020536

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