Electronic properties of (Ga,Mn)N thin films with high Mn content
Date
2008-11-19
Authors
Granville, S.
Ruck, B. J.
Preston, A. R. H.
Stewart, T.
Budde, F.
Trodahl, H. J.
Bittar, A.
Downes, J. E.
Ridgway, M.
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American Institute of Physics (AIP)
Abstract
Optical and dc resistivity measurements as well as x-ray spectroscopies have been performed on (Ga,Mn)N films containing Mn at up to 11 at. %. The results indicate that at higher Mn contents, the Fermi level is situated within extended states, while GaN host interband optical transitions are unaffected. The Mn state is confirmed to be 3d⁵, as in the case of lower Mn content films; however, the high Mn content merges the 3d levels into a band located just below the host conduction band. The Fermi level is located within these Mn states just below the conduction band, in sharp contrast to its midgap position in fully crystalline, low Mn concentration materials. The difference in the position of the Fermi level at high Mn dopant levels has important implications for the promotion of ferromagnetism in this material.
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Keywords
Keywords: Conduction bands; Electric conductivity; Electric currents; Electron mobility; Electronic properties; Fermi level; Fermions; Gallium nitride; Heat conduction; Manganese; Semiconducting gallium; Thick films; Three dimensional; Dc resistivities; Dopant leve
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Journal of Applied Physics
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Journal article
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