Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×10¹² to 1×10¹⁴ cm⁻² then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Fatima_Effect_of_ion_mass_on_the_1999.pdf||534.32 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.