Fatima, S.; Wong-Leung, J.; Fitz Gerald, J.; Jagadish, C.
Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×10¹² to 1×10¹⁴ cm⁻² then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the...[Show more]
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