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Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Fatima, S.; Wong-Leung, J.; Fitz Gerald, J.; Jagadish, C.

Description

Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×10¹² to 1×10¹⁴ cm⁻² then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the...[Show more]

CollectionsANU Research Publications
Date published: 1999-02-22
Type: Journal article
URI: http://hdl.handle.net/1885/15974
Source: Applied Physics Letters
DOI: 10.1063/1.123468

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