Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Simple item page
dc.contributor.authorFatima, S.
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorFitz Gerald, J.
dc.contributor.authorJagadish, C.
dc.date.accessioned2015-10-19T23:04:34Z
dc.date.available2015-10-19T23:04:34Z
dc.date.issued1999-02-22
dc.date.updated2015-12-12T09:39:57Z
dc.description.abstractEvolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×10¹² to 1×10¹⁴ cm⁻² then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the mass of the implanted species even though the dose was adjusted to create a similar damage distribution for all implanted species.
dc.description.sponsorshipAustralian Research Council supported J. W. L.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15974
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 20/10/15). Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.123468
dc.sourceApplied Physics Letters
dc.titleEffect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
dc.typeJournal article
local.bibliographicCitation.issue8en_AU
local.bibliographicCitation.lastpage1143en_AU
local.bibliographicCitation.startpage1141en_AU
local.contributor.affiliationFatima, S, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationFitz Gerald, John, College of Physical and Mathematical Sciences, CPMS Research School of Earth Sciences, RSES General, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoremailshf109@rsphysse.anu.edu.auen_AU
local.contributor.authoruidU970552en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor040312en_AU
local.identifier.ariespublicationMigratedxPub25350en_AU
local.identifier.citationvolume74en_AU
local.identifier.doi10.1063/1.123468en_AU
local.identifier.scopusID2-s2.0-0000740603
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

Downloads

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Fatima_Effect_of_ion_mass_on_the_1999.pdf
Size:
534.32 KB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
884 B
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2024 LYRASIS