On the nature of radiative recombination in GaAsN
Date
2002-12-02
Authors
Sun, B. Q.
Gal, M.
Gao, Q.
Jagadish, C.
Tan, Hark Hoe
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American Institute of Physics (AIP)
Abstract
Radiative recombination at low temperatures in GaAsN is often associated with localized excitons. In this short note, we report results from high-resolution time-resolvedphotoluminescencespectroscopy that indicate that excitons, localized or otherwise, cannot be involved in the recombination process of this alloy system. The risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected, and found from excitonic recombination in other III–V materials, such as GaAs. We suggest that the radiative recombination in GaAsN takes place between localized electrons and delocalized holes.
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Keywords: Energy gap; Excitons; Photoluminescence; Spectroscopic analysis; Photoluminescence spectroscopy; Semiconducting gallium compounds
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Applied Physics Letters
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Journal article
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