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On the nature of radiative recombination in GaAsN

Sun, B. Q.; Gal, M.; Gao, Q.; Tan, H. H.; Jagadish, C.


Radiative recombination at low temperatures in GaAsN is often associated with localized excitons. In this short note, we report results from high-resolution time-resolvedphotoluminescencespectroscopy that indicate that excitons, localized or otherwise, cannot be involved in the recombination process of this alloy system. The risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected, and found from excitonic recombination in other III–V materials,...[Show more]

CollectionsANU Research Publications
Date published: 2002-12-02
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1526913


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