On the nature of radiative recombination in GaAsN

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dc.contributor.authorSun, B. Q.en_AU
dc.contributor.authorGal, M.en_AU
dc.contributor.authorGao, Q.en_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-10-19T00:52:01Z
dc.date.available2015-10-19T00:52:01Z
dc.date.issued2002-12-02
dc.date.updated2015-12-12T09:13:15Z
dc.description.abstractRadiative recombination at low temperatures in GaAsN is often associated with localized excitons. In this short note, we report results from high-resolution time-resolvedphotoluminescencespectroscopy that indicate that excitons, localized or otherwise, cannot be involved in the recombination process of this alloy system. The risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected, and found from excitonic recombination in other III–V materials, such as GaAs. We suggest that the radiative recombination in GaAsN takes place between localized electrons and delocalized holes.
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15956
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 19/10/15). Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1526913
dc.sourceApplied Physics Letters
dc.subjectKeywords: Energy gap; Excitons; Photoluminescence; Spectroscopic analysis; Photoluminescence spectroscopy; Semiconducting gallium compounds
dc.titleOn the nature of radiative recombination in GaAsN
dc.typeJournal article
local.bibliographicCitation.issue23en_AU
local.bibliographicCitation.lastpage4370en_AU
local.bibliographicCitation.startpage4368en_AU
local.contributor.affiliationSun, B Q, University of New South Wales, Australiaen_AU
local.contributor.affiliationGal, Michael, University of New South Wales, Australiaen_AU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoremailqiang.gao@anu.edu.auen_AU
local.contributor.authoruidu4006742en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor020501en_AU
local.identifier.ariespublicationMigratedxPub22513en_AU
local.identifier.citationvolume81en_AU
local.identifier.doi10.1063/1.1526913en_AU
local.identifier.scopusID2-s2.0-0037011490
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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