Zhu, X. F.; Williams, J. S.; Conway, M. J.; Ridgway, M. C.; Fortuna, F.; Ruault, M.-O.; Bernas, H.
Nanocavities in Si substrates, formed by conventional H implantation and thermal annealing, are shown to evolve in size during subsequent Si irradiation. Both ex situ and in situ analytical techniques were used to demonstrate that the mean nanocavity diameter decreases as a function of Si irradiation dose in both the crystalline and amorphous phases. Potential mechanisms for this irradiation-induced nanocavity evolution are discussed. In the crystalline phase, the observed decrease in diameter...[Show more]
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