Proton implantation-induced intermixing of InAs∕InP quantum dots
Date
2006-05-30
Authors
Barik, S.
Jagadish, C.
Tan, Hark Hoe
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American Institute of Physics
Abstract
Protonimplantation-induced intermixing of InAsquantum dots(QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900°C for 30s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800°C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V interdiffusion whereas the QDsgrown on and capped with GaInAsP layers show the least implantation-induced energy shift due to weak group V and group III interdiffusion. The QDs capped with InP and InGaAs layers show intermediate implantation-induced energy shift and are less thermally stable compared to the QDsgrown on and capped with GaInAsP layers. The QDs capped with InP layers show enhanced photoluminescence(PL) intensity when implanted with lower proton dose (less than 5×10¹⁴ions/cm²). On the other hand higher proton dose (more than 1×10¹⁴ions/cm²) reduces the PL linewidth in all samples.
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Keywords: Annealing; Indium compounds; Ion implantation; Metallorganic chemical vapor deposition; Photoluminescence; Protons; Thermodynamic stability; GaInAsP; Implantation-induced energy shift.; Interdiffusion; Optimum annealing temperature; Semiconductor quantum
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Applied Physics Letters
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