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Proton implantation-induced intermixing of InAs∕InP quantum dots

Barik, S.; Tan, H. H.; Jagadish, C.


Protonimplantation-induced intermixing of InAsquantum dots(QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900°C for 30s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800°C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V...[Show more]

CollectionsANU Research Publications
Date published: 2006-05-30
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2208371


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