Proton implantation-induced intermixing of InAs∕InP quantum dots
Protonimplantation-induced intermixing of InAsquantum dots(QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900°C for 30s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800°C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Barik_Proton_implantation-induced_2006.pdf||Published Version||73.65 kB||Adobe PDF|
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