Proton implantation-induced intermixing of InAs∕InP quantum dots

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dc.contributor.authorBarik, S.en_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-10-06T03:34:07Z
dc.date.available2015-10-06T03:34:07Z
dc.date.issued2006-05-30
dc.date.updated2015-12-12T07:47:58Z
dc.description.abstractProtonimplantation-induced intermixing of InAsquantum dots(QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900°C for 30s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800°C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V interdiffusion whereas the QDsgrown on and capped with GaInAsP layers show the least implantation-induced energy shift due to weak group V and group III interdiffusion. The QDs capped with InP and InGaAs layers show intermediate implantation-induced energy shift and are less thermally stable compared to the QDsgrown on and capped with GaInAsP layers. The QDs capped with InP layers show enhanced photoluminescence(PL) intensity when implanted with lower proton dose (less than 5×10¹⁴ions/cm²). On the other hand higher proton dose (more than 1×10¹⁴ions/cm²) reduces the PL linewidth in all samples.
dc.description.sponsorshipThe authors gratefully acknowledge financial support from the Australian Research Council.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15775
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 6/10/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2208371
dc.sourceApplied Physics Letters
dc.subjectKeywords: Annealing; Indium compounds; Ion implantation; Metallorganic chemical vapor deposition; Photoluminescence; Protons; Thermodynamic stability; GaInAsP; Implantation-induced energy shift.; Interdiffusion; Optimum annealing temperature; Semiconductor quantum
dc.titleProton implantation-induced intermixing of InAs∕InP quantum dots
dc.typeJournal article
local.bibliographicCitation.issue22en_AU
local.bibliographicCitation.startpage223101en_AU
local.contributor.affiliationBarik, Satyanarayan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoremailsnb109@rsphysse.anu.edu.auen_AU
local.contributor.authoruidu2507109en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor020501en_AU
local.identifier.absfor100799en_AU
local.identifier.absfor091299en_AU
local.identifier.ariespublicationMigratedxPub13163en_AU
local.identifier.citationvolume88en_AU
local.identifier.doi10.1063/1.2208371en_AU
local.identifier.scopusID2-s2.0-33744810582
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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