Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy
Results of electrical characterization of Au nucleated InAs₁ˍₓSbₓnanowiresgrown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAsnanowires is observed for a Sb content of x = 0.13. Pure InSbnanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs₁ˍₓSbₓ shell is found to have a substantial positive shift in...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Thelander_Electrical_properties_of_2012.pdf||Published Version||999.57 kB||Adobe PDF|
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