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Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Thelander, Claes; Caroff, Philippe; Plissard, Sébastien; Dick, Kimberly A.


Results of electrical characterization of Au nucleated InAs₁ˍₓSbₓnanowiresgrown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAsnanowires is observed for a Sb content of x = 0.13. Pure InSbnanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs₁ˍₓSbₓ shell is found to have a substantial positive shift in...[Show more]

CollectionsANU Research Publications
Date published: 2012-06-06
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4726037


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