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Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

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dc.contributor.authorThelander, Claes
dc.contributor.authorCaroff, Philippe
dc.contributor.authorPlissard, Sébastien
dc.contributor.authorDick, Kimberly A.
dc.date.accessioned2015-09-25T00:25:19Z
dc.date.available2015-09-25T00:25:19Z
dc.date.issued2012-06-06
dc.date.updated2016-02-24T09:31:12Z
dc.description.abstractResults of electrical characterization of Au nucleated InAs₁ˍₓSbₓnanowiresgrown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAsnanowires is observed for a Sb content of x = 0.13. Pure InSbnanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs₁ˍₓSbₓ shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires.
dc.description.sponsorshipThis work received financial support from the Nanometer Structure Consortium at Lund University (nmC@LU), the Swedish Research Council (VR), the Swedish Foundation for Strategic Research (SSF), and the Knut and Alice Wallenberg Foundation (KAW). It also received financial support from the French National Research Agency (ANR), TERADOT project, under Contract No.ANR-11-JS04-002-01.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15697
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 24/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Thelander, Claes, et al. "Electrical properties of InAs1− xSbx and InSb nanowires grown by molecular beam epitaxy." Applied Physics Letters 100.23 (2012): 232105.) and may be found at https://doi.org/10.1063/1.4726037
dc.sourceApplied Physics Letters
dc.subjectKeywords: Crystal phase; Diameter dependent; Electrical characterization; Field-effect mobilities; InAs; InSb nanowire; Mobility value; Positive shift; Wurtzites; Epitaxial growth; Indium antimonides; Indium arsenide; Molecular beam epitaxy; Nanowires; Zinc sulfide
dc.titleElectrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy
dc.typeJournal article
local.bibliographicCitation.issue23en_AU
local.bibliographicCitation.startpage232105en_AU
local.contributor.affiliationThelander, Claes, Lund University, Swedenen_AU
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationPlissard, Sebastien, Institut dÔÇÖElectronique, de Microelectronique et de Nanotechnologie, Franceen_AU
local.contributor.affiliationDick, Kimberley A., Lund University, Swedenen_AU
local.contributor.authoruidu5309137en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.absfor100706en_AU
local.identifier.ariespublicationf5625xPUB6801en_AU
local.identifier.citationvolume100en_AU
local.identifier.doi10.1063/1.4726037en_AU
local.identifier.scopusID2-s2.0-84862137591
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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