Graded silicon nitride films: Optics and passivation
Date
2015
Authors
Thomson, Andrew
Wan, Yimao
Lal, Niraj
Elliman, Robert
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
The authors describe a method for graded thin-film deposition requiring a single step that exploits the noninstantaneous replacement of reactant gases. They deposit the graded silicon-nitride films by plasma enhanced chemical vapor deposition. Channeling Rutherford backscattering measurements of the graded films find the N:Si ratio increases sixfold from the c-Si surface to air interfaces. The refractive index at the crystalline silicon/film interface was 2.96 reducing monotonically to 1.95 at the surface. The graded films achieve improved optics and surface passivation for silicon solar cells with measured surface recombination velocity of 3.9 cm/s.
Description
Keywords
Citation
Collections
Source
Journal of Vacuum Science and Technology A
Type
Journal article
Book Title
Entity type
Access Statement
Open Access