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Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Dhaka, Veer; Perros, Alexander; Naureen, Shagufta; Shahid, Naeem; Jiang, Hua; Kakko, Joona-Pekko; Haggren, Tuomas; Kauppinen, Esko; Srinivasan, Anand; Lipsanen, Harri

Description

Low temperature (∼200 ◦C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
URI: http://hdl.handle.net/1885/103644
Source: AIP Advances
DOI: 10.1063/1.4941063

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