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Light ion induced damage in CdTe and Hg(1 - X)Cd(x)Te epitaxial thin films

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Date

1996

Authors

Russo, S. P.
Johnston, P. N.
Elliman, R. G.
Jamieson, D. N.

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Research Projects

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Abstract

The effect of variation of MCT stoichiometry (x) on the damage induced by 2 MeV He ions has been measured by the comparison of damage accumulation in Hg0.48Cd0.52Te (MCT, x ≅ 0.52) and CdTe (MCT, x 1). The comparison of damage induced by irradiation in the random and channeled directions for MCT (x = 0.52) by 2 MeV He ions has also been measured. The results extend earlier work on light ion damage induced in MCT epitaxial thin films.

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https://hdl.handle.net/1885/733801394

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ANU Research Publications

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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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Journal article

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DOI

10.1016/0168-583X(95)01373-3

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