Light ion induced damage in CdTe and Hg(1 - X)Cd(x)Te epitaxial thin films
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Russo, S. P.
Johnston, P. N.
Elliman, R. G.
Jamieson, D. N.
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The effect of variation of MCT stoichiometry (x) on the damage induced by 2 MeV He ions has been measured by the comparison of damage accumulation in Hg0.48Cd0.52Te (MCT, x ≅ 0.52) and CdTe (MCT, x 1). The comparison of damage induced by irradiation in the random and channeled directions for MCT (x = 0.52) by 2 MeV He ions has also been measured. The results extend earlier work on light ion damage induced in MCT epitaxial thin films.
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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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