Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Damage enhancement effect in silicon implanted with molecular ions

Simple item page
dc.contributor.authorLin, Cheng Luen
dc.contributor.authorYang, Gen Qingen
dc.contributor.authorFang, Zi Weien
dc.contributor.authorLi, Xiao Qinen
dc.contributor.authorZou, Shi Changen
dc.contributor.authorGyulai, J.en
dc.contributor.authorElliman, R. G.en
dc.date.accessioned2026-01-03T12:40:56Z
dc.date.available2026-01-03T12:40:56Z
dc.date.issued1993en
dc.description.abstractThis paper reports a comparison between the two kinds of damage behavior in silicon implanted with P2+ molecular ions and P+ atomic ions. The dependence of damage enhancement effect of P2+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect.en
dc.description.statusPeer-revieweden
dc.format.extent8en
dc.identifier.issn1001-6511en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651071en
dc.identifier.scopus43949171735en
dc.identifier.urihttps://hdl.handle.net/1885/733803366
dc.language.isoenen
dc.sourceScience in China (Scientia Sinica) Series Aen
dc.subjectdamage enhancementen
dc.subjectmolecular ion implantationen
dc.subjectsiliconen
dc.titleDamage enhancement effect in silicon implanted with molecular ionsen
dc.typeJournal articleen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage242en
local.bibliographicCitation.startpage235en
local.contributor.affiliationLin, Cheng Lu; CAS - Shanghai Institute of Microsystem and Information Technologyen
local.contributor.affiliationYang, Gen Qing; CAS - Shanghai Institute of Microsystem and Information Technologyen
local.contributor.affiliationFang, Zi Wei; CAS - Shanghai Institute of Microsystem and Information Technologyen
local.contributor.affiliationLi, Xiao Qin; CAS - Shanghai Institute of Microsystem and Information Technologyen
local.contributor.affiliationZou, Shi Chang; CAS - Shanghai Institute of Microsystem and Information Technologyen
local.contributor.affiliationGyulai, J.; Wigner Research Centre for Physicsen
local.contributor.affiliationElliman, R. G.; Royal Melbourne Institute of Technology Universityen
local.identifier.citationvolume36en
local.identifier.pured9afe900-84b4-42b0-ab60-fd92fb912b4fen
local.identifier.urlhttps://www.scopus.com/pages/publications/43949171735en
local.type.statusPublisheden

Downloads

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS