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Damage enhancement effect in silicon implanted with molecular ions

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Date

1993

Authors

Lin, Cheng Lu
Yang, Gen Qing
Fang, Zi Wei
Li, Xiao Qin
Zou, Shi Chang
Gyulai, J.
Elliman, R. G.

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Abstract

This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P2+ molecular ions and P+ atomic ions. The dependence of damage enhancement effect of P2+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect.

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Keywords

damage enhancement, molecular ion implantation, silicon

Citation

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https://hdl.handle.net/1885/733803366

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ANU Research Publications

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Science in China (Scientia Sinica) Series A

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Journal article

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Publication

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