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Photoluminescence in er-doped Ge-As-Se chalcogenide thin films

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dc.contributor.authorYan, Kunlunen
dc.contributor.authorWang, Rongpingen
dc.contributor.authorVu, Khuen
dc.contributor.authorElliman, Roberten
dc.contributor.authorBelay, Kidaneen
dc.contributor.authorLuther-Davies, Barryen
dc.date.accessioned2026-01-01T15:42:11Z
dc.date.available2026-01-01T15:42:11Z
dc.date.issued2011en
dc.description.abstractWe report ion-implanted Er ions into Ge11.5As24Se64.5 thin films with different doses, and subsequently thermal-annealed the films with di fferent times. The characterization results indicated that the thickness, refractive index and optical bandgap o f the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the 4I13/2→4I15/2 transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.en
dc.description.statusPeer-revieweden
dc.format.extent5en
dc.identifier.isbn9780977565771en
dc.identifier.otherORCID:/0000-0002-2747-5036/work/167650947en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651065en
dc.identifier.scopus84893704675en
dc.identifier.urihttps://hdl.handle.net/1885/733801395
dc.language.isoenen
dc.relation.ispartofConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011en
dc.relation.ispartofseriesConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011en
dc.relation.ispartofseriesOptics InfoBase Conference Papersen
dc.titlePhotoluminescence in er-doped Ge-As-Se chalcogenide thin filmsen
dc.typeConference paperen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage1616en
local.bibliographicCitation.startpage1612en
local.contributor.affiliationYan, Kunlun; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationWang, Rongping; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationVu, Khu; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationElliman, Robert; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationBelay, Kidane; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationLuther-Davies, Barry; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.identifier.essn2162-2701en
local.identifier.pure57e5110c-11d2-466e-ba93-072427a630dben
local.identifier.urlhttps://www.scopus.com/pages/publications/84893704675en
local.type.statusPublisheden

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