Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Photoluminescence in er-doped Ge-As-Se chalcogenide thin films

Thumbnail Image

Date

2011

Authors

Yan, Kunlun
Wang, Rongping
Vu, Khu
Elliman, Robert
Belay, Kidane
Luther-Davies, Barry

Journal Title

Journal ISSN

Volume Title

Publisher

Access Statement

Research Projects

Organizational Units

Journal Issue

Abstract

We report ion-implanted Er ions into Ge11.5As24Se64.5 thin films with different doses, and subsequently thermal-annealed the films with di fferent times. The characterization results indicated that the thickness, refractive index and optical bandgap o f the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the 4I13/2→4I15/2 transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.

Description

Keywords

Citation

URI

https://hdl.handle.net/1885/733801395

Collections

ANU Research Publications

Source

Type

Conference paper

Book Title

Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011

Entity type

Publication

Access Statement

License Rights

DOI

Restricted until

DSpace software copyright © 2002-2026 LYRASIS