DIFFUSION, SOLUBILITY AND SEGREGATION OF IMPLANTED Cu, Ag AND Au IN AMORPHOUS Si.

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dc.contributor.authorJacobson, D. C.en
dc.contributor.authorElliman, R. G.en
dc.contributor.authorGibson, J. M.en
dc.contributor.authorOlson, G. L.en
dc.contributor.authorPoate, J. M.en
dc.contributor.authorWilliams, J. S.en
dc.date.accessioned2026-01-03T12:41:11Z
dc.date.available2026-01-03T12:41:11Z
dc.date.issued1987en
dc.description.abstractThe diffusion of Cu, Ag and Au has been measured in implanted, amorphous Si, over the range 150-600 degree C. The diffusion coefficients are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1. 25, 1. 6 and 1. 4 eV respectively. The solubility of Au in amorphous Si was measured to be 6 orders of magnitude greater than crystalline Si at a temperature of 515 degree C. The Cu, Ag and Au are segregated ahead of the moving amorphous-crystalline interface. The presence of Au can increase the velocity of the interface.en
dc.description.statusPeer-revieweden
dc.format.extent6en
dc.identifier.isbn0931837405en
dc.identifier.issn0272-9172en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651041en
dc.identifier.scopus0023569958en
dc.identifier.urihttps://hdl.handle.net/1885/733803386
dc.language.isoenen
dc.publisherMaterials Research Socen
dc.relation.ispartofMaterials Research Society Symposia Proceedingsen
dc.relation.ispartofseriesBeam-Solid Interact and Transient Processesen
dc.relation.ispartofseriesMaterials Research Society Symposia Proceedingsen
dc.titleDIFFUSION, SOLUBILITY AND SEGREGATION OF IMPLANTED Cu, Ag AND Au IN AMORPHOUS Si.en
dc.typeConference paperen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage332en
local.bibliographicCitation.startpage327en
local.contributor.affiliationJacobson, D. C.; Nokiaen
local.contributor.affiliationElliman, R. G.; Nokiaen
local.contributor.affiliationGibson, J. M.; Nokiaen
local.contributor.affiliationOlson, G. L.; Nokiaen
local.contributor.affiliationPoate, J. M.; Nokiaen
local.contributor.affiliationWilliams, J. S.; Nokiaen
local.identifier.puree9c30653-c346-40cf-8a9e-134699fb18acen
local.identifier.urlhttps://www.scopus.com/pages/publications/0023569958en
local.type.statusPublisheden

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