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DIFFUSION, SOLUBILITY AND SEGREGATION OF IMPLANTED Cu, Ag AND Au IN AMORPHOUS Si.

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Date

1987

Authors

Jacobson, D. C.
Elliman, R. G.
Gibson, J. M.
Olson, G. L.
Poate, J. M.
Williams, J. S.

Journal Title

Journal ISSN

Volume Title

Publisher

Materials Research Soc

Access Statement

Research Projects

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Abstract

The diffusion of Cu, Ag and Au has been measured in implanted, amorphous Si, over the range 150-600 degree C. The diffusion coefficients are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1. 25, 1. 6 and 1. 4 eV respectively. The solubility of Au in amorphous Si was measured to be 6 orders of magnitude greater than crystalline Si at a temperature of 515 degree C. The Cu, Ag and Au are segregated ahead of the moving amorphous-crystalline interface. The presence of Au can increase the velocity of the interface.

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Citation

URI

https://hdl.handle.net/1885/733803386

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ANU Research Publications

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Type

Conference paper

Book Title

Materials Research Society Symposia Proceedings

Entity type

Publication

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