DIFFUSION, SOLUBILITY AND SEGREGATION OF IMPLANTED Cu, Ag AND Au IN AMORPHOUS Si.
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Jacobson, D. C.
Elliman, R. G.
Gibson, J. M.
Olson, G. L.
Poate, J. M.
Williams, J. S.
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Materials Research Soc
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Abstract
The diffusion of Cu, Ag and Au has been measured in implanted, amorphous Si, over the range 150-600 degree C. The diffusion coefficients are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1. 25, 1. 6 and 1. 4 eV respectively. The solubility of Au in amorphous Si was measured to be 6 orders of magnitude greater than crystalline Si at a temperature of 515 degree C. The Cu, Ag and Au are segregated ahead of the moving amorphous-crystalline interface. The presence of Au can increase the velocity of the interface.
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Materials Research Society Symposia Proceedings
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