High-energy ion implantation for electrical isolation of InP-based materials and devices
| dc.contributor.author | Ridgway, M. C. | en |
| dc.contributor.author | Elliman, R. G. | en |
| dc.contributor.author | Faith, M. E. | en |
| dc.contributor.author | Kemeny, P. C. | en |
| dc.contributor.author | Davies, M. | en |
| dc.date.accessioned | 2026-01-03T12:41:32Z | |
| dc.date.available | 2026-01-03T12:41:32Z | |
| dc.date.issued | 1995-03-01 | en |
| dc.description.abstract | The application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP. | en |
| dc.description.sponsorship | We thank S.J. Rolfe for the SIMS measurements and the Australian Department of Indus!ry, Technology and Regional Development and the Australian Teiecommunica-tions and Electronics Research Board for partial funding. | en |
| dc.description.status | Peer-reviewed | en |
| dc.format.extent | 4 | en |
| dc.identifier.issn | 0168-583X | en |
| dc.identifier.other | ORCID:/0000-0002-1304-4219/work/167651108 | en |
| dc.identifier.scopus | 0001513895 | en |
| dc.identifier.uri | https://hdl.handle.net/1885/733803435 | |
| dc.language.iso | en | en |
| dc.source | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | en |
| dc.title | High-energy ion implantation for electrical isolation of InP-based materials and devices | en |
| dc.type | Journal article | en |
| dspace.entity.type | Publication | en |
| local.bibliographicCitation.lastpage | 326 | en |
| local.bibliographicCitation.startpage | 323 | en |
| local.contributor.affiliation | Ridgway, M. C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National University | en |
| local.contributor.affiliation | Elliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National University | en |
| local.contributor.affiliation | Faith, M. E.; Telecom Australia Research Lab | en |
| local.contributor.affiliation | Kemeny, P. C.; Telecom Australia Research Lab | en |
| local.contributor.affiliation | Davies, M.; National Research Council of Canada | en |
| local.identifier.citationvolume | 96 | en |
| local.identifier.doi | 10.1016/0168-583X(94)00510-9 | en |
| local.identifier.pure | 8e7a2b09-6599-44af-9e1b-d3aa1d08bc1e | en |
| local.identifier.url | https://www.scopus.com/pages/publications/0001513895 | en |
| local.type.status | Published | en |