High-energy ion implantation for electrical isolation of InP-based materials and devices
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Ridgway, M. C.
Elliman, R. G.
Faith, M. E.
Kemeny, P. C.
Davies, M.
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Abstract
The application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP.
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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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