ION BEAM-INDUCED DAMAGING AND DYNAMIC ANNEALING PROCESSES IN SILICON.

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dc.contributor.authorShort, K. T.en
dc.contributor.authorChivers, D. J.en
dc.contributor.authorElliman, R. G.en
dc.contributor.authorLiu, J.en
dc.contributor.authorPogany, A. P.en
dc.contributor.authorWagenfeld, H.en
dc.contributor.authorWilliams, J. S.en
dc.date.accessioned2026-01-03T12:41:31Z
dc.date.available2026-01-03T12:41:31Z
dc.date.issued1984en
dc.description.statusPeer-revieweden
dc.format.extent6en
dc.identifier.isbn0444008691en
dc.identifier.issn0272-9172en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651152en
dc.identifier.scopus0021290836en
dc.identifier.urihttps://hdl.handle.net/1885/733803431
dc.language.isoenen
dc.publisherNorth Hollanden
dc.relation.ispartofMaterials Research Society Symposia Proceedingsen
dc.relation.ispartofseriesMaterials Research Society Symposia Proceedingsen
dc.titleION BEAM-INDUCED DAMAGING AND DYNAMIC ANNEALING PROCESSES IN SILICON.en
dc.typeConference paperen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage252en
local.bibliographicCitation.startpage247en
local.contributor.affiliationElliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationWilliams, J. S.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.identifier.pureb91d3230-d908-439b-b4fb-d9e014873b81en
local.identifier.urlhttps://www.scopus.com/pages/publications/0021290836en
local.type.statusPublisheden

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