Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Epitaxial crystallisation of tin implanted silicon

Simple item page
dc.contributor.authorThornton, R. P.en
dc.contributor.authorElliman, R. G.en
dc.contributor.authorWilliams, J. S.en
dc.date.accessioned2026-01-03T12:40:57Z
dc.date.available2026-01-03T12:40:57Z
dc.date.issued1989-02-02en
dc.description.abstractTime resolved reflectivity, Rutherford backscattering and channeling, and transmission electron microscopy have been used to examine the epitaxy of amorphous layers formed by Si+ and Sn+ ion implantation into both 〈100〉 and 〈111〉 silicon. Although Sn at concentrations less than about 1 at.% does not have any influence on the regrowth kinetics of (100) silicon, it has a beneficial effect on the growth of (111) silicon. At high concentrations Sn retards epitaxy and can lead to a polycrystalline phase transformation.en
dc.description.sponsorshipWe acknowledge the Commonwealth Special Research Centres Scheme, the Australian Research Council and the Victorian State Government for financial support of this project.en
dc.description.statusPeer-revieweden
dc.format.extent4en
dc.identifier.issn0168-583Xen
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651126en
dc.identifier.scopus0024608656en
dc.identifier.urihttps://hdl.handle.net/1885/733803367
dc.language.isoenen
dc.sourceNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atomsen
dc.titleEpitaxial crystallisation of tin implanted siliconen
dc.typeJournal articleen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage390en
local.bibliographicCitation.startpage387en
local.contributor.affiliationThornton, R. P.; Royal Melbourne Institute of Technology Universityen
local.contributor.affiliationElliman, R. G.; Royal Melbourne Institute of Technology Universityen
local.contributor.affiliationWilliams, J. S.; Royal Melbourne Institute of Technology Universityen
local.identifier.citationvolume37-38en
local.identifier.doi10.1016/0168-583X(89)90209-7en
local.identifier.pure6094130d-850e-4bb6-b973-ce5186759d6ben
local.identifier.urlhttps://www.scopus.com/pages/publications/0024608656en
local.type.statusPublisheden

Downloads

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS