Epitaxial crystallisation of tin implanted silicon

Abstract

Time resolved reflectivity, Rutherford backscattering and channeling, and transmission electron microscopy have been used to examine the epitaxy of amorphous layers formed by Si+ and Sn+ ion implantation into both 〈100〉 and 〈111〉 silicon. Although Sn at concentrations less than about 1 at.% does not have any influence on the regrowth kinetics of (100) silicon, it has a beneficial effect on the growth of (111) silicon. At high concentrations Sn retards epitaxy and can lead to a polycrystalline phase transformation. Show more