Cryogenic Steep Slope Field-Effect Transistors (invited talk)
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Date
Authors
Knoch, J.
Richstein, B.
Han, Y.
Konig, D.
Frentzen, M.
Hellmich, L.
Klos, J.
Scholz, S.
Zhao, Q. T.
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Institute of Electrical and Electronics Engineers Inc.
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Abstract
The present paper studies with experiment and simulation a number of measures that improve current cryogenic MOSFETs to enable the device to be operated at very low supply voltages.
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Book Title
2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
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Publication