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The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation

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dc.contributor.authorAfifuddin, A.en
dc.contributor.authorButcher, K. S.A.en
dc.contributor.authorTansley, T. L.en
dc.contributor.authorTimmers, H.en
dc.contributor.authorElliman, R. G.en
dc.contributor.authorWeijers, T. D.M.en
dc.contributor.authorOphel, T. R.en
dc.date.accessioned2026-01-01T15:42:15Z
dc.date.available2026-01-01T15:42:15Z
dc.date.issued2000en
dc.description.abstractGaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.en
dc.description.statusPeer-revieweden
dc.format.extent4en
dc.identifier.isbn0780358147en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651060en
dc.identifier.scopus84950137055en
dc.identifier.urihttps://hdl.handle.net/1885/733801408
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en
dc.relation.ispartof2000 International Semiconducting and Insulating Materials Conference, SIMC 2000en
dc.relation.ispartofseries11th International Semiconducting and Insulating Materials Conference, SIMC 2000en
dc.relation.ispartofseriesIEEE Semiconducting and Semi-Insulating Materials Conference, SIMCen
dc.rightsPublisher Copyright: © 2000 IEEE.en
dc.subjectChemical lasersen
dc.subjectChemical vapor depositionen
dc.subjectConductivityen
dc.subjectGallium nitrideen
dc.subjectGolden
dc.subjectOptical filmsen
dc.subjectParticle beam opticsen
dc.subjectPlasma chemistryen
dc.subjectPlasma propertiesen
dc.subjectSiliconen
dc.titleThe properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiationen
dc.typeConference paperen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage54en
local.bibliographicCitation.startpage51en
local.contributor.affiliationAfifuddin, A.; Macquarie Universityen
local.contributor.affiliationButcher, K. S.A.; Macquarie Universityen
local.contributor.affiliationTansley, T. L.; Macquarie Universityen
local.contributor.affiliationTimmers, H.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationElliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationWeijers, T. D.M.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationOphel, T. R.; Department of Nuclear Physics & Accelerator Applications, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.identifier.doi10.1109/SIM.2000.939196en
local.identifier.purea924bb3f-f100-4dce-a04a-c03aead3dc3cen
local.identifier.urlhttps://www.scopus.com/pages/publications/84950137055en
local.type.statusPublisheden

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