The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation
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Authors
Afifuddin, A.
Butcher, K. S.A.
Tansley, T. L.
Timmers, H.
Elliman, R. G.
Weijers, T. D.M.
Ophel, T. R.
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Institute of Electrical and Electronics Engineers Inc.
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Abstract
GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.
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Book Title
2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
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Publication