CoSi<sub>2</sub> formation on strained Ge<sub>x</sub>Si<sub>1-x</sub> layers by Co/Ge<sub>x</sub>Si<sub>1-x</sub> thermal reaction
| dc.contributor.author | Ridgway, M. C. | en |
| dc.contributor.author | Elliman, R. G. | en |
| dc.contributor.author | Pascual, R. | en |
| dc.contributor.author | Whitton, J. L. | en |
| dc.contributor.author | Baribeau, J. M. | en |
| dc.date.accessioned | 2026-01-03T12:41:45Z | |
| dc.date.available | 2026-01-03T12:41:45Z | |
| dc.date.issued | 1993 | en |
| dc.description.abstract | The formation of CoSi2 on Ge.17Si.83 layers by Co/Ge.17Si.83 thermal reaction has been studied with a variety of analytical techniques. Co films deposited on strained Ge.17Si.83 layers were annealed at 600°C for 0-240 min. Following 240 min annealing, the reacted surface layer was composed of CoSi, CoSi2 and GexSi1-x precipitates (the latter probably rich in Ge) as identified with transmission electron microscopy, x-ray diffraction and/or Raman spectroscopy. Lateral phase non-uniformity was evident with both transmission and scanning electron microscopy. For samples annealed with and without an evaporated Co film, enhanced relaxation of the underlying Ge.17Si.83 layer was apparent in the former. | en |
| dc.description.status | Peer-reviewed | en |
| dc.format.extent | 6 | en |
| dc.identifier.isbn | 1558992073 | en |
| dc.identifier.issn | 0272-9172 | en |
| dc.identifier.other | ORCID:/0000-0002-1304-4219/work/167651032 | en |
| dc.identifier.scopus | 0027188906 | en |
| dc.identifier.uri | https://hdl.handle.net/1885/733803443 | |
| dc.language.iso | en | en |
| dc.publisher | Publ by Materials Research Society | en |
| dc.relation.ispartof | Thermodynamics and Kinetics | en |
| dc.relation.ispartofseries | Materials Research Society Symposium Proceedings | en |
| dc.relation.ispartofseries | Proceedings of the Symposium on Phase Transformations in Thin Films | en |
| dc.title | CoSi<sub>2</sub> formation on strained Ge<sub>x</sub>Si<sub>1-x</sub> layers by Co/Ge<sub>x</sub>Si<sub>1-x</sub> thermal reaction | en |
| dc.type | Conference paper | en |
| dspace.entity.type | Publication | en |
| local.bibliographicCitation.lastpage | 160 | en |
| local.bibliographicCitation.startpage | 155 | en |
| local.contributor.affiliation | Ridgway, M. C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National University | en |
| local.contributor.affiliation | Elliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National University | en |
| local.contributor.affiliation | Pascual, R.; Australian National University | en |
| local.contributor.affiliation | Whitton, J. L.; Australian National University | en |
| local.contributor.affiliation | Baribeau, J. M.; Australian National University | en |
| local.identifier.pure | 23c51da8-9036-4b7f-b6f3-8fd073e1c780 | en |
| local.identifier.url | https://www.scopus.com/pages/publications/0027188906 | en |
| local.type.status | Published | en |