CoSi<sub>2</sub> formation on strained Ge<sub>x</sub>Si<sub>1-x</sub> layers by Co/Ge<sub>x</sub>Si<sub>1-x</sub> thermal reaction
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Ridgway, M. C.
Elliman, R. G.
Pascual, R.
Whitton, J. L.
Baribeau, J. M.
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Publ by Materials Research Society
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Abstract
The formation of CoSi2 on Ge.17Si.83 layers by Co/Ge.17Si.83 thermal reaction has been studied with a variety of analytical techniques. Co films deposited on strained Ge.17Si.83 layers were annealed at 600°C for 0-240 min. Following 240 min annealing, the reacted surface layer was composed of CoSi, CoSi2 and GexSi1-x precipitates (the latter probably rich in Ge) as identified with transmission electron microscopy, x-ray diffraction and/or Raman spectroscopy. Lateral phase non-uniformity was evident with both transmission and scanning electron microscopy. For samples annealed with and without an evaporated Co film, enhanced relaxation of the underlying Ge.17Si.83 layer was apparent in the former.
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Thermodynamics and Kinetics
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