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Strain Relaxation behaviour in Germanium-on-insulator fabricated by Ion Implantation

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Date

2012

Authors

Kim, Tae-Hyun
Belay, Kidane
Llewellyn, David
Elliman, Robert
Luther-Davies, Barry
Choi, Duk-Yong

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.

Description

Keywords

Keywords: Compositional properties; Different thickness; Ge layers; Germanium-on-insulator; Layer thickness; Germanium; Microelectronics; Raman spectroscopy; Transmission electron microscopy; Ion implantation

Citation

URI

http://hdl.handle.net/1885/59928

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472413

Restricted until

2037-12-31

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Description
01_Kim_Strain_Relaxation_behaviour_in_2012.pdf (231.55 KB)

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