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Round Robin: Measurement of H Implantation Distributions in Si by Elastic Recoil Detection

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Date

2004

Authors

Boudreault, G
Elliman, Robert
Grotzschel, R
Gujrathi, S.
Jeynes, C.
Lennard, W N
Rauhala, E
Sajavaara, T
Timmers, Heiko
Wang, Yanbin

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

A 200 mm amorphised Si wafer was implanted with 6-keV H + ions at a nominal fluence of 5×10 16 atoms/cm 2. The uniformity of the implant was better than 2% over the wafer. Samples of the wafer were analysed for absolute H fluence by nuclear reaction anal

Description

Keywords

Keywords: Elastic recoil detection analysis (ERDA); Implant standards; Ion beam analysis (IBA); Nuclear reaction analysis (NRA); Ion beams; Rutherford backscattering spectroscopy; Secondary ion mass spectrometry; Silicon wafers; X ray analysis; Hydrogen ERDA; Hydrogen; Implant standards; NRA; Silicon

Citation

URI

http://hdl.handle.net/1885/77964

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.nimb.2004.02.022

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