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Progress towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

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Date

2012

Authors

Willems van Beveren, L. H.
McCallum, Jeffrey C.
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.

Description

Keywords

Keywords: Current voltage; Electronic transport; Indium phosphide nanowires; InP; Millikelvin temperatures; Red light; Characterization; Indium phosphide; Microelectronics; Nanowires; Optoelectronic devices; Light emitting diodes

Citation

URI

http://hdl.handle.net/1885/60096

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472354

Restricted until

2037-12-31

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Description
01_Willems van Beveren_Progress_towards_2012.pdf (262.35 KB)

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