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Ion implantation in bulk semi-insulating 4H-SiC

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Date

1999

Authors

Rao, Mulpuri V
Tucker, J
Ridgway, Mark C
Holland, O
Mittereder, J

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Multiple energy N (at 500 °C) and Al (at 800 °C) ion implantations were performed into bulk semi-insulating 4H-SiC at various doses to obtain uniform implant concentrations in the range 1 × 1018-1 × 1020 cm-3 to a depth of 1.0 μm. Implant anneals wer

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Keywords

Citation

URI

http://hdl.handle.net/1885/93400

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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