Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells

Simple item page
dc.contributor.authorWen, Xiaoming
dc.contributor.authorDavis, Jeffrey A.
dc.contributor.authorVan Dao, Lap
dc.contributor.authorHannaford, Peter
dc.contributor.authorColeman, Victoria A
dc.contributor.authorJagadish, C.
dc.contributor.authorKoike, K.
dc.contributor.authorSasa, S.
dc.contributor.authorInoue, M.
dc.contributor.authorYano, M.
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-14T05:06:56Z
dc.date.available2015-12-14T05:06:56Z
dc.date.issued2007-06-01
dc.date.updated2019-11-25T08:06:07Z
dc.description.abstractThe authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnO∕ZnMgOmultiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and subsequent rapid thermal annealing. A high dose of implantation leads to lattice damage and agglomeration of defects leading to large defect clusters, which result to an increase in nonradiative recombination.
dc.description.sponsorshipThe authors gratefully acknowledge the Australian Research Council for financial support and Swinburne University of Technology for Strategic Initiative funding. One of the authors X.W. acknowledges partial financial support of the Chinese National Natural Science Foundation 10364004 and the Yunnan Natural Science Foundation 2003E0013M.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/95010
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2745264
dc.sourceApplied Physics Letters
dc.subjectKeywords: Activation energy; Agglomeration; Ion implantation; Photoluminescence; Point defects; Rapid thermal annealing; Implantation dose; Lattice damage; Nonradiative recombination; Photoluminescence efficiency; Semiconductor quantum wells
dc.titleTemperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells
dc.typeJournal article
local.bibliographicCitation.issue22en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage221914en_AU
local.contributor.affiliationWen, X, Swinburne University of Technology, Australiaen_AU
local.contributor.affiliationDavis, Jeff A, Swinburne University of Technology, Australiaen_AU
local.contributor.affiliationDao, Lap Van, Swinburne University of Technology, Australiaen_AU
local.contributor.affiliationHannaford, Peter, Swinburne University of Technology, Australiaen_AU
local.contributor.affiliationColeman, Victoria A, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationKoike, Kazuto, Osaka Institute of Technology, Japanen_AU
local.contributor.affiliationSasa, Shigehiko, Osaka Institute of Technology, Japanen_AU
local.contributor.affiliationInoue, Masataka, Osaka Institute of Technology, Japanen_AU
local.contributor.affiliationYano, Mitsuaki, Osaka Institute of Technology, Japanen_AU
local.contributor.authoruidu9302338en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor100799en_AU
local.identifier.ariespublicationu8709800xPUB21en_AU
local.identifier.citationvolume90en_AU
local.identifier.doi10.1063/1.2745264en_AU
local.identifier.scopusID2-s2.0-34249881316
local.identifier.thomsonID000246909900031
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

Downloads

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Wen_Temperature_dependent_2007.pdf
Size:
330.14 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
884 B
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS