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Analytical and computer modelling of suns-Voc silicon solar cell characteristics

Date

Authors

Cuevas, Andres

Tan, Jason

Publisher

Elsevier

Abstract

Theoretical modelling of suns-Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.

Keywords

Keywords: Computer modelling; Diffusivities; Extreme conditions; I-V characteristic curves; I-V characteristics; Ideality factors; Illumination intensities; Non-idealities; Surface recombinations; Theoretical modelling; Photovoltaic cells; Silicon solar cells; Sola I-V characteristics; Solar cell modelling; Suns-Voc measurements

URI

http://hdl.handle.net/1885/28157

Collections

ANU Research Publications

Source

Solar Energy Materials and Solar Cells

Type

Journal article

DOI

10.1016/j.solmat.2008.11.041

Restricted until

2037-12-31

Downloads

File

Description

01_Cuevas_Analytical_and_computer_2009.pdf (172.74 KB)