Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor
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Yin, Chunming
Rancic, Milos
Stavrias, Nikolas
de Boo, Gabriele G.
McCallum, Jeffrey C.
Sellars, Matthew
Rogge, Sven
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IEEE
Abstract
We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.
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Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
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2037-12-31
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