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Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor

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Authors

Yin, Chunming
Rancic, Milos
Stavrias, Nikolas
de Boo, Gabriele G.
McCallum, Jeffrey C.
Sellars, Matthew
Rogge, Sven

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IEEE

Abstract

We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.

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Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

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Restricted until

2037-12-31