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Characteristics of MOCVD-Grown Thin p-Clad InGaAs Quantum-Dot Lasers

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Date

2004

Authors

Lever McGowan, Penelope
Buda, Manuela
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.

Description

Keywords

Keywords: Current density; Electroluminescence; Ground state; Metallorganic chemical vapor deposition; Refractive index; Semiconducting indium gallium arsenide; Semiconductor quantum dots; Quantum dot lasers; Threshold current density; Semiconductor lasers InGaAs; Quantum dot (QD); Semiconductor laser

Citation

URI

http://hdl.handle.net/1885/77487

Collections

ANU Research Publications

Source

IEEE Photonics Technology Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/LPT.2004.836351

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