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Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique

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dc.contributor.authorLei, W.en_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-09-18T04:45:11Z
dc.date.available2015-09-18T04:45:11Z
dc.date.issued2013-01-25
dc.date.updated2016-02-24T08:57:25Z
dc.description.abstractGraded growth technique is utilized to realize the control over the composition, morphology, and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures. By increasing the initial mole fraction of the Sb precursor during the graded growth of InAsSb, more Sb atoms can be incorporated into the InAsSb nanostructures despite the same Sb mole fraction averaged over the graded growth. This leads to a shape change from dots to dashes/wires for the InAsSb nanostructures. As a result of the composition and morphology change, photoluminescence from the InAsSb nanostructures shows different polarization and temperature characteristics. This work demonstrates a technologically important technique—graded growth, to control the growth and the resultant physical properties of self-assembled semiconductor nanostructures.
dc.description.sponsorshipFinancial support from Australian Research Council is gratefully acknowledged.en_AU
dc.format5 pages
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15569
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.4789513
dc.sourceApplied Physics Letters
dc.subjectKeywords: Growth techniques; Mole fraction; Morphology changes; Self-assembled; Semiconductor nanostructures; Shape change; Temperature characteristic; Indium antimonides; Morphology; Optical properties; Semiconductor growth; Nanostructures
dc.titleEngineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique
dc.typeJournal article
dcterms.dateAccepted2013-01-14
local.bibliographicCitation.issue3en_AU
local.bibliographicCitation.lastpage4
local.bibliographicCitation.startpage033111en_AU
local.contributor.affiliationLei, Wen, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4450995en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020400en_AU
local.identifier.absfor091200en_AU
local.identifier.absfor100700en_AU
local.identifier.absseo970102en_AU
local.identifier.ariespublicationf5625xPUB2386en_AU
local.identifier.citationvolume102en_AU
local.identifier.doi10.1063/1.4789513en_AU
local.identifier.scopusID2-s2.0-84872966850
local.identifier.thomsonID000314032600075
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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