Improvement of resistive switching uniformity by introducing a thin NbOx interface layer

Liu, Xinjun; Sadaf, Sharif Md.; Kim, Seonghyun; Biju, Kuyyadi P.; Cao, Xun; Son, Myungwoo; Choudhury, Sakeb; Jung, Gun-Young; Hwang, Hyunsang

Improvement of resistive switching uniformity by introducing a thin NbOx interface layer

Date

2012

Authors

Liu, Xinjun

Sadaf, Sharif Md.

Kim, Seonghyun

Biju, Kuyyadi P.

Cao, Xun

Son, Myungwoo

Choudhury, Sakeb

Jung, Gun-Young

Hwang, Hyunsang

Publisher

Electrochemical Society, Inc.

Abstract

Uniformity is by far an important issue for the application of resistive random access memory (RRAM). In this letter, we explore a prototype RRAM device for switching uniformity improvement. Compared to W/WO3-x/Pt structure, after the introduction of a thin NbOx film between WO 3-x and Pt bottom electrode, the device exhibits much better resistive hysteresis and switching uniformity. The main composition of the interface layer is NbO2 suboxide showing insulator-metal phase transition. A combined filamentary conduction model is proposed to clarify the role of NbOx layer on the resistive switching stabilization during the forming process.