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Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for crosspoint memory applications

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Date

2012

Authors

Liu, Xinjun
Sadaf, Sharif Md.
Son, Myungwoo
Park, Jubong
Shin, Jungho
Lee, Wootae
Seo, Kyungah
Lee, Daeseok
Hwang, Hyunsang

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) Pt/NbO2/Pt device with a memory-switching (MS) Pt/Nb2O5/Pt device and observe the suppression of the undesired sneak current. A simpler Pt/Nb2O5/NbO2/Pt bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this can significantly reduce the fabrication complexity.

Description

Keywords

Keywords: Bi-layer; Co-occurrence; Crosspoint memory; Device characteristics; Memory applications; Memory array; Memory switching; Non-volatile memories; Resistive switching; Threshold switching; Niobium; Niobium oxide; Platinum; Switching systems; Switching Crosspoint memory; niobium oxide; nonvolatile memory; resistive switching (RS); threshold switching (TS)

Citation

URI

http://hdl.handle.net/1885/65440

Collections

ANU Research Publications

Source

IEEE Electron Device Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/LED.2011.2174452

Restricted until

2037-12-31

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01_Liu_Co-occurrence_of_threshold_2012.pdf (434.13 KB)

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